Single GaN FET is relatively more flexible in comprehensive applications, which requires certain cooperative driver IC to deliver its function on end applications.
Half-Bridge GaN FET is characterized by wafer-level integration of upper and lower transistors, small size, which makes the PCB layout more flexible by smaller parasitic inductance.
Innoscience has a complete 8-inch GaN-on-Si industrialization IDM, including power devices and RF devices product lines.
Innoscience (Zhuhai) Technology Co., Ltd. was founded in December 2015 by the oversea returnee team. The first phase is located in Zhuhai National Hi-Tech District and has established China’s first mass production line of 8-inch GaN-on-Si Power Device. Innoscience provides a wide range of solutions including 30V-650V GaN-on-Si power devices and 5G RF devices. The product design and performance have reached international advanced level. Innoscience is committed to building a world-class brand and contribute to the growth of China’s semiconductor industry.